shantou huashan electronic devices co.,ltd . ? applications l h igh - speed switching. ? absolute maximum ratings ? t a =25 ??? ? electrical characteristics ? t a =25 ??? symbol characteristics min typ max unit test conditions bv dss drain - source breakdown voltage 60 0 v i d = 250 | a ,v gs =0v i dss zero gate voltage drain current 1 0 | a v ds = 60 0v ? v gs =0 i gss gate ? source leakage current ? 100 na v gs = ? 3 0v , v ds =0v v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 | a r ds(on) static drain - source on - resistance 2.0 2.5 ? v gs =10v, i d = 2.0 a ciss input capacitance 710 920 pf coss output capacitance 65 85 pf v ds =2 5 v , v gs = 0, f= 1 mhz crss reverse transfer capacitance 14 19 pf t d( on ) turn - on d elay time 20 50 ns tr rise time 55 120 ns t d( off ) turn - off delay time 70 150 ns t f fall time 55 120 ns v dd = 30 0 v, i d = 4.0 a r g = 2 5 |? * qg total gate charge 22 29 nc v ds = 48 0 v qgs gate ? source charge 4.8 nc v gs = 10v qgd gate ? drain charge 8.5 nc i d = 4.0 a* is continuous source current 4.0 a v sd diode forward voltage 1.5 v i s = 4.0 a , v gs = 0 rth ? j - c ? thermal resistance ? junction - to - case 1.25 ?? /w *p ulse test o p ulse width ? 300 | s ? duty cycle ? 2% n - channel mosfet t stg ?a?a storage temperature ?-?-?-?-?-?-?-?-?-?-?- - 5 5 ~1 50 ?? t j ?a?a operating junction temperature ?-?-?-?-?-?- ?-?- ?-?- 150 ?? p d ?a?a allowable power dissipation ? t c =25 ?? ? ?-?-?-?-?-?-?- 1 00 w v dss ?a?a drain - source v oltage ?-?-?-?-?-?-?-?-?-?-?-?-?- 60 0v v gss ?a?a gate - source voltage ?-?-?-?-?-?-?-?-?-?-?-?-?- 3 0v i d ?a?a drain current ? t c =25 ?? ? ?-?-?-?-?-?-?- ?- ?- ?-?- ?-?- ?- 4.0 a h fp 4n60 1 d g 2 d d 3 d s to - 220
shantou huashan electroni c devices co.,ltd . n - channel mosfet HFP4N60
shantou huashan electronic devices co.,ltd . n - channel mosfet HFP4N60
shantou huashan electronic devices co.,ltd . n - cha nnel mosfet HFP4N60
shantou huashan electronic devices co.,ltd . n - channel mosfet HFP4N60
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